NGW50T65H3DFP Datasheet - nexperia

50A high speed trench field-stop IGBT

NGW50T65H3DFP Features

* Collector current (IC) rated at 50 A

* Low conduction and switching losses

* Stable and tight parameters for easy parellel operation

* Maximum junction temperature of 175 °C

* Fully rated as a soft fast reverse recovery diode

* RoHS compliant, lead-f

NGW50T65H3DFP General Description

The NGW50T65H3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring thirdgeneration technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW50T65H3DFP is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 50 A IGBT is optimi.

NGW50T65H3DFP Datasheet (362.61 KB)

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Datasheet Details

Part number:

NGW50T65H3DFP

Manufacturer:

nexperia ↗

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362.61 KB

Description:

50a high speed trench field-stop igbt.
TO-247-3 NGW50T65H3DFP 650 V, 50 A high speed trench field-stop IGBT with full rated silicon diode Rev. 1 28 June 2024 Product data she.

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NGW50T65H3DFP 50A high speed trench field-stop IGBT nexperia

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NGW50T65H3DFP Features

NGW50T65H3DFP General Description

Datasheet Details

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