ACE2301 - P-Channel Enhancement Mode MOSFET

ACE Technology

Datasheet Details

P-Channel Enhancement Mode

VDS=-20V RDS(ON),Vgs@-4.5V,Ids@-2.8A=100mΩ RDS(ON),Vgs@-2.5V,Ids@-2.0A=150mΩ Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1) Maximum Power Dissipation TA=25℃ TA=70℃ Symbol VDS VGS ID IDM PD TJ TSTG RθJA Max Unit -20 V ±12 V -2.2 A -8 A 1.25 W 0.8 -55 to 150 OC -55 to 150 OC O 140 C/.

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