Datasheet Details
- Part number
- N04L1630C2B
- Manufacturer
- AMI SEMICONDUCTOR
- File Size
- 225.23 KB
- Datasheet
- N04L1630C2B_AMISEMICONDUCTOR.pdf
- Description
- 4Mb Ultra-Low Power Asynchronous CMOS SRAMs
N04L1630C2B Description
AMI Semiconductor, Inc.ULP Memory Solutions 670 North McCarthy Blvd.Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04L1630C2B Ad.
Pin Name A0-A17 WE CE1 CE2 OE LB UB I/O0-I/O7 I/O8-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable 1 Input Chip Enable 2.
N04L1630C2B Features
* Wide Power Supply Range 2.7 to 3.6 Volts
* Very low standby current 1uA (Typical)
* Very low operating current 2.0mA at 1µs (Typical)
* Very low Page Mode operating current 0.8mA at 1µs (Typical)
* Simple memory control Dual Chip Enables (CE1 and CE2) Byte c
N04L1630C2B Applications
* where ultra-lowpower is critical such as medical applications, battery backup and power sensitive hand-held devices. The unique page mode operation saves operating power while improving the performance over standard SRAMs. The device can operate over a very wide temperature range of -40oC to +85oC a
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