AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET

APM

Description

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AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET The AP10H03DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and op.

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Datasheet Specifications

Part number: AP10H03DF
Manufacturer: APM
File Size: 1.28 MB
Datasheet: AP10H03DF-APM.pdf
Description: 30V N+N-Channel Enhancement Mode MOSFET

Features

* VDS = 30V ID =35A RDS(ON)

Applications

* , should be limited by total power dissipation. 2 AP10H03DF RVE3.2 Typical Characteristics AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET Figure1: Output Characteristics Figure 2: Typical Transfer Characteristics Figure 3:On-resistance vs. Drain Current Figure 4: Body Diode Characterist

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AP10H03DF 30V N +N-Channel Enhancement Mode MOSFET APM

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