MRF5812 Bipolar Junction Transistor

Advanced Power Technology

MRF5812 Description

MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish .
Designed for high current, low power, low noise, amplifiers up to 1.

MRF5812 Features

* Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix
* Tape and Reel, 500 units R2 suffix

📥 Download Datasheet

MRF5812 Datasheet Preview — Preview of MRF5812 PDF

Datasheet Details

Part number: MRF5812
Manufacturer: Advanced Power Technology
File Size: 147.36 KB
Datasheet: MRF5812_AdvancedPowerTechnology.pdf
Description: Bipolar Junction Transistor

📁 Related Datasheet

MRF581 - NPN SILICON RF TRANSISTOR (ASI)
MRF5811LT1 - NPN Silicon High Frequency Transistor (Motorola)
MRF581A - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
MRF581AG - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
MRF581G - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
MRF580 - HIGH FREQUENCY TRANSISTOR (Motorola)
MRF586 - NPN Silicon High Frequency Transistor (ASI)
MRF587 - NPN Silicon High Frequency Transistor (Motorola)

📌 All Tags

Bipolar Junction Transistor Advanced Power Technology

Advanced Power Technology MRF5812-like datasheet

MRF5812G - Bipolar Junction Transistor
MRF517 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF553G - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF557 - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF557G - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS