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MRF5812G, MRF5812 Bipolar Junction Transistor

MRF5812G Description

MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish .
Designed for high current, low power, low noise, amplifiers up to 1.

MRF5812G Features

* Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Effective SO-8 package SO-8 R1 suffix
* Tape and Reel, 500 units R2 suffix

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF5812G, MRF5812. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
MRF5812G, MRF5812
Manufacturer
Advanced Power Technology
File Size
147.36 KB
Datasheet
MRF5812_AdvancedPowerTechnology.pdf
Description
Bipolar Junction Transistor
Note
This datasheet PDF includes multiple part numbers: MRF5812G, MRF5812.
Please refer to the document for exact specifications by model.

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📌 All Tags

Bipolar Junction Transistor Advanced Power Technology
Advanced Power Technology MRF5812G-like datasheet