AFN2364S Datasheet - Alfa-MOS

AFN2364S 200V N-Channel Enhancement Mode MOSFET

AFN2364S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN2364S Features

* ID= 1.5A,RDS(ON)=580mΩ@VGS=10V

* ID= 1.0A,RDS(ON)=600mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23-3L package design Application

* DC/DC Converters

* Load Switch

* LED

AFN2364S Datasheet (553.84 KB)

AFN2364S Datasheet Preview — Preview of AFN2364S PDF

Datasheet Details

Part number:

AFN2364S

Manufacturer:

Alfa-MOS

File Size:

553.84 KB

Description:

200v n-channel enhancement mode mosfet.

📁 Related Datasheet

AFN2302AS N-Channel MOSFET (Alfa-MOS)

AFN2304AS N-Channel MOSFET (Alfa-MOS)

AFN2306A N-Channel MOSFET (Alfa-MOS)

AFN2306AE N-Channel MOSFET (Alfa-MOS)

AFN2308A 60V N-Channel MOSFET (Alfa-MOS)

AFN2308AS23RG N-Channel 60V MOSFET (VBsemi)

AFN2312A 20V N-Channel Enhancement Mode MOSFET (Alfa-MOS)

AFN2316A N-Channel MOSFET (Alfa-MOS)

AFN2318A N-Channel MOSFET (Alfa-MOS)

AFN2324A 100V N-Channel Enhancement Mode MOSFET (Alfa-MOS)

TAGS

AFN2364S 200V N-Channel Enhancement Mode MOSFET Alfa-MOS

Image Gallery

AFN2364S Distributor