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AFN3460

N-Channel MOSFET

AFN3460 Features

* 20V/5.8A,RDS(ON)=26mΩ@VGS=4.5V 20V/4.2A,RDS(ON)=30mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=36mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP-6 package design Application Portable Equipment Battery Powered System Net Working

AFN3460 General Description

AFN3460, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss .

AFN3460 Datasheet (566.01 KB)

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Preview of AFN3460 PDF

Datasheet Details

Part number:

AFN3460

Manufacturer:

Alfa-MOS

File Size:

566.01 KB

Description:

N-channel mosfet.

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AFN3460 N-Channel MOSFET Alfa-MOS

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