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AFN3468W, AFN3468W-Alfa 150V N-Channel Enhancement Mode MOSFET

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Description

Alfa-MOS Technology General .
AFN3468W, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFN3468W, AFN3468W-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFN3468W, AFN3468W-Alfa
Manufacturer
Alfa-MOS
File Size
344.78 KB
Datasheet
AFN3468W-Alfa-MOS.pdf
Description
150V N-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: AFN3468W, AFN3468W-Alfa.
Please refer to the document for exact specifications by model.

Features

* ID=1.5A,RDS(ON)=320mΩ@VGS=10V
* ID=1.4A,RDS(ON)=340mΩ@VGS=6V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability

AFN3468W Distributors

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