AFN7716S

30V N-Channel Enhancement Mode MOSFET

Alfa-MOS

AFN7716S Features

* ID=10A,RDS(ON)=15mΩ@VGS=10V

* ID= 7A,RDS(ON)=17mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* DFN3.3X3.3-8L package design Application

* DC-DC Converter

* POL Pin Define Pin 1 2 3

AFN7716S General Description

AFN7716S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN7716S Datasheet (387.36 KB)

AFN7716S Datasheet Preview — Preview of AFN7716S PDF

Datasheet Details

Part number:

AFN7716S

Manufacturer:

Alfa-MOS

File Size:

387.36 KB

Description:

30v n-channel enhancement mode mosfet.

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AFN7716S 30V N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN7716S Features

AFN7716S General Description

Datasheet Details

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Description:

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