AFN7798WS, AFN7798WS-Alfa Datasheet - Alfa-MOS

AFN7798WS 200V N-Channel Enhancement Mode MOSFET

AFN7798WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFN7798WS Features

* ID=1.5A,RDS(ON)=580mΩ@VGS=10V

* ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* DFN3.3X3.3-8L package design Application

* DC-DC Converter

* POL Pin Define Pin 1

AFN7798WS-Alfa-MOS.pdf

AFN7798WS Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN7798WS, AFN7798WS-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN7798WS, AFN7798WS-Alfa

Manufacturer:

Alfa-MOS

File Size:

594.41 KB

Description:

200v n-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN7798WS, AFN7798WS-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN7798WS AFN7798WS-Alfa 200V N-Channel Enhancement Mode MOSFET Alfa-MOS

AFN7798WS Distributor