AFN7798WS, AFN7798WS-Alfa 200V N-Channel Enhancement Mode MOSFET

Alfa-MOS

Description

Alfa-MOS Technology General .
AFN7798WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

📥 Download Datasheet

AFN7798WS Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN7798WS, AFN7798WS-Alfa. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: AFN7798WS, AFN7798WS-Alfa
Manufacturer: Alfa-MOS
File Size: 594.41 KB
Datasheet: AFN7798WS-Alfa-MOS.pdf
Description: 200V N-Channel Enhancement Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: AFN7798WS, AFN7798WS-Alfa.
Please refer to the document for exact specifications by model.

Features

* ID=1.5A,RDS(ON)=580mΩ@VGS=10V
* ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability

AFN7798WS Distributors

📁 Related Datasheet

AFN2308AS23RG AFND1208U1 AFND1G08U3

📌 All Tags

AFN7798WS-Alfa 200V N-Channel Enhancement Mode MOSFET Alfa-MOS

Alfa-MOS AFN7798WS-like datasheet