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AFN7798WS

200V N-Channel Enhancement Mode MOSFET

AFN7798WS Features

* ID=1.5A,RDS(ON)=580mΩ@VGS=10V

* ID=1.0A,RDS(ON)=600mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* DFN3.3X3.3-8L package design Application

* DC-DC Converter

* POL Pin Define Pin 1

AFN7798WS General Description

AFN7798WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFN7798WS Datasheet (594.41 KB)

Preview of AFN7798WS PDF

Datasheet Details

Part number:

AFN7798WS

Manufacturer:

Alfa-MOS

File Size:

594.41 KB

Description:

200v n-channel enhancement mode mosfet.

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TAGS

AFN7798WS 200V N-Channel Enhancement Mode MOSFET Alfa-MOS

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