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AS7C251MNTF36A - (AS7C251MNTF32A / AS7C251MNTF36A) 2.5V 1M x 32/36 Flowthrough SRAM

This page provides the datasheet information for the AS7C251MNTF36A, a member of the AS7C251MNTF32A (AS7C251MNTF32A / AS7C251MNTF36A) 2.5V 1M x 32/36 Flowthrough SRAM family.

Description

The AS7C251MNTF32A/36A family is a high performance CMOS 32 Mbit synchronous Static Random Access Memory (SRAM) organized as 1,048,576 words × 32 or 36 bits and incorporates a LATE Write.

Features

  • Organization: 1,048,576 words × 32 or 36 bits NTD™architecture for efficient bus operation Fast clock to data access: 7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous operation Flow-through mode Asynchronous output enable control Available in 100-pin TQFP package.
  • Byte write enables Clock enable for operation hold Multiple chip enab.

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Datasheet Details

Part number AS7C251MNTF36A
Manufacturer Alliance Semiconductor Corporation
File Size 459.45 KB
Description (AS7C251MNTF32A / AS7C251MNTF36A) 2.5V 1M x 32/36 Flowthrough SRAM
Datasheet download datasheet AS7C251MNTF36A Datasheet
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Full PDF Text Transcription

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December 2004 ® AS7C251MNTF32A AS7C251MNTF36A 2.5V 1M × 32/36 Flowthrough SRAM with NTDTM Features • • • • • • • • Organization: 1,048,576 words × 32 or 36 bits NTD™architecture for efficient bus operation Fast clock to data access: 7.5/8.5/10 ns Fast OE access time: 3.5/4.0 ns Fully synchronous operation Flow-through mode Asynchronous output enable control Available in 100-pin TQFP package • • • • • • • Byte write enables Clock enable for operation hold Multiple chip enables for easy expansion 2.5V core power supply Self-timed write cycles Interleaved or linear burst modes Snooze mode for standby operation www.DataSheet4U.com Logic block diagram A[19:0] 20 D Address register Burst logic Q 20 CLK CE0 CE1 CE2 R/W BWa BWb BWc BWd ADV / LD LBO ZZ D Q 20 Write delay addr.
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