AOD413A - 40V P-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

The AOD413A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS (V) = -40V ID = -12A (VGS = -10V) RDS(ON) < 44mW (VGS = -10V) RDS(ON) < 66mW (VGS = -4.5V) 100% UIS Tested 100% Rg Tested TO252 DPAK D Top View Bottom View D D S G G S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current B,H TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR Power Dissipation B TC=25.

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