AO3416L N-Channel MOSFET

Alpha & Omega Semiconductors

Description

Rev 2: Nov 2004 AO3416, AO3416L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General .
The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.

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Datasheet Specifications

Part number: AO3416L
Manufacturer: Alpha & Omega Semiconductors
File Size: 118.88 KB
Datasheet: AO3416L-AlphaOmegaSemiconductors.pdf
Description: N-Channel MOSFET

Features

* VDS (V) = 20V ID = 6.5 A RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 26mΩ (VGS = 2.5V) RDS(ON) < 34mΩ (VGS = 1.8V) ESD Rating: 2000V HBM TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS

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📁 Related Datasheet

AO3416A AO3411 AO3414A AO3415 AO3415A AO3418

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AO3416L N-Channel MOSFET Alpha & Omega Semiconductors

Alpha & Omega Semiconductors AO3416L-like datasheet