AO6603 - MOSFET

Alpha & Omega Semiconductors

Datasheet Details

The AO6603 uses advanced trench technology to provide excellent R www.DataSheet4U.com DS(ON) and low gate charge.

n-channel p-channel -30V VDS (V) = 20V ID = 1.7 (VGS = 4.5V) -2.5A RDS(ON) < 225mΩ (VGS = 4.5V) < 135mΩ (VGS = -10V) < 290m Ω (VGS = 2.5V) < 425m Ω (VGS = 1.8V) < 185m Ω (VGS = 2.5V) < 265m Ω (VGS = 1.8V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings T A=25°C unless otherwise noted Symbol Parameter Max n-channel V Drain-Source Voltage 20 DS VGS Gate-Source Voltage ±8 Continuous Drain Current A Pulsed Drain Current Power Dissipat.

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