AO6603 Datasheet - Alpha & Omega Semiconductors

AO6603, MOSFET

AO6603 Complementary Enhancement Mode Field Effect Transistor General Description The AO6603 uses advanced trench technology to provide excellent R ww

Features

* n-channel p-channel -30V VDS (V) = 20V ID = 1.7 (VGS = 4.5V) -2.5A RDS(ON) < 225mΩ (VGS = 4.5V) < 135mΩ (VGS = -10V) < 290m Ω (VGS = 2.5V) < 425m Ω (VGS = 1.8V) < 185m Ω (VGS = 2.5V) < 265m Ω (VGS = 1.8V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolu

AO6603_AlphaOmegaSemiconductors.pdf