AO6605 Datasheet - Alpha & Omega Semiconductors

AO6605, MOSFET

AO6605 Complementary Enhancement Mode Field Effect Transistor General Description The AO6605 uses advanced trench technology to www.DataSheet4U.com pr

Features

* n-channel p-channel -20V VDS (V) = 20V ID = 1.9A (VGS = 4.5V) -2.5A RDS(ON) < 200m Ω < 97mΩ (VGS = 4.5V) < 270m Ω < 130mΩ (VGS = 2.5V) < 400m Ω < 190mΩ (VGS = 1.8V) D1 TSOP6 Top View G1 S2 G2 1 6 2 5 3 4 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherw

AO6605_AlphaOmegaSemiconductors.pdf