BLF8G20LS-230V - Power LDMOS transistor
230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) Gp D ACPR
BLF8G20LS-230V Features
* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation
* Lower output capacitance for improved performance in Doherty applications
* Designed for low memory effects providing excellent pre-dis
