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BLF8G22LS-140 Power LDMOS transistor

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Description

BLF8G22LS-140 Power LDMOS transistor Rev.3 * 1 September 2015 Product data sheet 1.Product profile 1.1 General .
140 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

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Datasheet Specifications

Part number
BLF8G22LS-140
Manufacturer
Ampleon
File Size
342.91 KB
Datasheet
BLF8G22LS-140-Ampleon.pdf
Description
Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for broadband operation (2000 MHz to 2200 MHz)

Applications

* at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2110 to 2170 900 28 33 18.5 32.

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