BLF8G22LS-160BV Datasheet - Ampleon

BLF8G22LS-160BV - Power LDMOS transistor

160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Test signal f IDq VDS PL(AV) Gp D ACPR

BLF8G22LS-160BV Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Decoupling leads to enable improved video bandwidth (100 MHz typical)

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memor

Datasheet Details

BLF8G22LS-160BV

Ampleon

1.04 MB

Power ldmos transistor.

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