BLF8G22LS-160BV Datasheet - Ampleon

BLF8G22LS-160BV Power LDMOS transistor

160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR .

BLF8G22LS-160BV Features

* Excellent ruggedness

* High efficiency

* Low thermal resistance providing excellent thermal stability

* Decoupling leads to enable improved video bandwidth (100 MHz typical)

* Lower output capacitance for improved performance in Doherty applications

* Designed for low memor

BLF8G22LS-160BV-Ampleon.pdf