Description
BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descript.
100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
Features
* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (90 MHz typical)
* Designed for broadband operation (2300 MHz to 2400 MHz)
* Lower output capacitance for improved per
Applications
* at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal
f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2300 to 2400
900 28 25
19 32
