BLF8G24LS-200PN Datasheet - Ampleon

BLF8G24LS-200PN, Power LDMOS transistor

BLF8G24LS-200PN Power LDMOS transistor Rev.3 * 1 December 2016 Product data sheet 1.Product profile 1.1 General .
200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

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BLF8G24LS-200PN-Ampleon.pdf

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Datasheet Details

Part number:

BLF8G24LS-200PN

Manufacturer:

Ampleon

File Size:

356.70 KB

Description:

Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (2300 MHz to 2400 MHz)

Applications

* at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2300 to 2400 1740 28 60 17.2 3

BLF8G24LS-200PN Distributors

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BLF8G24LS-200PN Power LDMOS transistor Ampleon

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