BLF8G24LS-200PN Power LDMOS transistor

Ampleon

Description

BLF8G24LS-200PN Power LDMOS transistor Rev.3 * 1 December 2016 Product data sheet 1.Product profile 1.1 General .
200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz.

📥 Download Datasheet

BLF8G24LS-200PN Datasheet Preview — Preview of BLF8G24LS-200PN PDF

Datasheet Specifications

Part number: BLF8G24LS-200PN
Manufacturer: Ampleon
File Size: 356.70 KB
Datasheet: BLF8G24LS-200PN-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Designed for broadband operation (2300 MHz to 2400 MHz)

Applications

* at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 2300 to 2400 1740 28 60 17.2 3

BLF8G24LS-200PN Distributors

📁 Related Datasheet

BLF8G27LS-140V BLF8G27LS-150GV BLF8G27LS-150V BLF8G38LS-75V BLF820 BLF861

📌 All Tags

BLF8G24LS-200PN Power LDMOS transistor Ampleon

Ampleon BLF8G24LS-200PN-like datasheet