BLF8G24LS-150V Power LDMOS transistor

Ampleon

Description

BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev.4 * 1 September 2015 Product data sheet 1.Product profile 1.1 General descript.
150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.

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Datasheet Specifications

Part number: BLF8G24LS-150V
Manufacturer: Ampleon
File Size: 449.76 KB
Datasheet: BLF8G24LS-150V-Ampleon.pdf
Description: Power LDMOS transistor

Features

* Excellent ruggedness
* High efficiency
* Low thermal resistance providing excellent thermal stability
* Decoupling leads to enable improved video bandwidth (70 MHz typical)

Applications

* at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2300 to 2400 1300 28 45 19 33

BLF8G24LS-150V Distributors

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BLF8G24LS-150V Power LDMOS transistor Ampleon

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