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HMC349AMS8G

SPDT Switch

HMC349AMS8G Features

* Nonreflective, 50 Ω design High isolation: 57 dB to 2 GHz Low insertion loss: 0.9 dB to 2 GHz High input linearity 1 dB power compression (P1dB): 34 dBm typical Third-order intercept (IP3): 52 dBm typical High power handling 33.5 dBm through path 26.5 dBm terminated path Single positive supply: 3 V

HMC349AMS8G General Description

The HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz. The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion l.

HMC349AMS8G Datasheet (322.32 KB)

Preview of HMC349AMS8G PDF

Datasheet Details

Part number:

HMC349AMS8G

Manufacturer:

Analog Devices ↗

File Size:

322.32 KB

Description:

Spdt switch.

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TAGS

HMC349AMS8G SPDT Switch Analog Devices

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