HMC349AMS8G Datasheet, Switch, Analog Devices

HMC349AMS8G Features

• Switch Nonreflective, 50 Ω design High isolation: 57 dB to 2 GHz Low insertion loss: 0.9 dB to 2 GHz High input linearity 1 dB power compression (P1dB): 34 dBm typical Third-order intercept (I

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HMC349AMS8G

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📄 Datasheet

Description:

Spdt switch. The HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPD

HMC349AMS8G Application

• Applications Cellular/4G infrastructure Wireless infrastructure Mobile radios Test equipment GENERAL DESCRIPTION The HMC349AMS8G is a gallium arseni

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HMC349AMS8G

Analog Devices

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