HMC349AMS8G Datasheet - Analog Devices

HMC349AMS8G SPDT Switch

The HMC349AMS8G is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (PHEMT), single-pole, double throw (SPDT) switch specified from 100 MHz to 4 GHz. The HMC349AMS8G is well suited for cellular infrastructure applications by yielding high isolation of 57 dB, low insertion l.

HMC349AMS8G Features

* Nonreflective, 50 Ω design High isolation: 57 dB to 2 GHz Low insertion loss: 0.9 dB to 2 GHz High input linearity 1 dB power compression (P1dB): 34 dBm typical Third-order intercept (IP3): 52 dBm typical High power handling 33.5 dBm through path 26.5 dBm terminated path Single positive supply: 3 V

HMC349AMS8G-AnalogDevices.pdf