UPG2214TB
CEL
388.00kb
L & s-band spdt switch.
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UPG2214TB - GaAs MMIC
(Renesas)
.
UPG2214TK - L. S-BAND SPDT SWITCH
(CEL)
GaAs INTEGRATED CIRCUIT
PG2214TK
L, S-BAND SPDT SWITCH
DESCRIPTION The PG2214TK is a GaAs MMIC for L, S-band SPDT (Single Pole Double Throw) swit.
UPG2214TK - L. S-BAND SPDT SWITCH
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2214TK
L, S-BAND SPDT SWITCH
DESCRIPTION
The µPG2214TK is a GaAs MMIC for L, S-band SPDT (Single Pole Double.
UPG2250T5N - POWER AMPLIFIER
(CEL)
GaAs INTEGRATED CIRCUIT
µPG2250T5N
1.8 V, POWER AMPLIFIER FOR BluetoothTM Class 1
DESCRIPTION
The µPG2250T5N is a GaAs MMIC for power amplifier whi.
uPG2253T6S - RF FRONT-END
(California Eastern Labs)
GaAs HJ-FET INTEGRATED CIRCUIT
PG2253T6S
RF FRONT-END IC FOR BluetoothTM CLASS 1
DESCRIPTION The PG2253T6S is a RF front-end integrated circuit f.
UPG22N60 - SMPS N-CHANNEL IGBT
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
UPG22N60
Insulated Gate Bipolar Transistor
600V, SMPS N-CHANNEL IGBT
DESCRIPTION
The UTC UPG22N60 is a N-channel .
UPG2006TB - NECs 1.8 V L/ S-BAND SPDT SWITCH
(NEC)
NEC's 1.8 V L, S-BAND UPG2006TB SPDT SWITCH
FEATURES
• LOW INSERTION LOSS: LINS = 0.3 dB TYP. @ Vcont = 1.8 V/0 V, f = 1 GHz LINS = 0.45 dB TYP. @ Vco.
UPG2009TB - L-BAND HIGH POWER SPDT SWITCH
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2009TB
L-BAND HIGH POWER SPDT SWITCH
DESCRIPTION The µPG2009TB is an L-band SPDT (Single Pole Double Throw) GaA.
UPG2009TB - L-BAND HIGH POWER SPDT SWITCH
(CEL)
NEC's L, S-BAND 4W SPDT SWITCH
UPG2009TB
FEATURES
• LOW INSERTION LOSS: LINS = 0.25 dB TYP. @ Vcont1/2 = 2.8 V/0 V, f = 1.0 GHz LINS = 0.30 dB TYP. .
UPG2012TB - L-BAND SPDT SWITCH
(NEC)
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2012TB
L-BAND SPDT SWITCH
DESCRIPTION The µPG2012TB is a GaAs MMIC for L-band SPDT (Single Pole Double Throw) s.