Part number:
CEM2030
Manufacturer:
CET
File Size:
94.16 KB
Description:
Dual-channel mosfet.
* 20V, 6A, RDS(ON) = 30mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. -20V, -4.3A, RDS(ON) = 90mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1
CEM2030
CET
94.16 KB
Dual-channel mosfet.
📁 Related Datasheet
CEM2030A - Dual Enhancement Mode Field Effect Transistor(N and P Channel)
(Chino-Excel Technology)
.
CEM2005 - Dual Enhancement Mode Field Effect Transistor(N and Channel)
(Chino-Excel Technology)
.
CEM2082 - Dual N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM2082
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 11A, RDS(ON) = 12mΩ @VGS = 4.5V. RDS(ON) = 18mΩ @VGS = 2.5V. Super high .
CEM2108 - Dual N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM2108
Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES
20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. Super high.
CEM2108E - Dual N-Channel MOSFET
(CET)
CEM2108E
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 10A, RDS(ON) = 13mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4..
CEM2133 - P-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM2133
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-20V, -10A, RDS(ON) = 18mΩ @VGS = -4.5V. RDS(ON) = 27mΩ @VGS = -2.5.
CEM2163 - P-Channel MOSFET
(CET)
CEM2163
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V.
Super high.
CEM2182 - N-Channel MOSFET
(CET)
CEM2182
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
20V, 9.3A, RDS(ON) = 18mΩ @VGS = 4.5V. RDS(ON) = 24mΩ @VGS = 2.5V.
.