CS14N10A4 Datasheet - CR Micro

CS14N10A4 Silicon N-Channel Power MOSFET

CS14N10 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-252.

CS14N10A4 Features

* l Fast Switching l Low ON Resistance(Rdson≤150 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ 100 V 14 A 43.1 W 113 mΩ Absolute（TC= 25℃ unless otherwise sp

CS14N10A4-CRMicro.pdf