CS14N25A0R Datasheet - CR Micro

CS14N25A0R Silicon N-Channel Power MOSFET

CS14N25 A0R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit f.

CS14N25A0R Features

* l Fast Switching l Low ON Resistance(Rdson≤0.25Ω) l Low Gate Charge (Typical Data:22.7nC) l Low Reverse transfer capacitances(Typical:13pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 250 V 14 A 100 W 0.20 Ω Absolute（TJ= 25℃ unless

CS14N25A0R-CRMicro.pdf