CS14N25A8R Datasheet - CR Micro

CS14N25A8R Silicon N-Channel Power MOSFET

CS14N25 A8R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ performance and enhance the avalanche energy. The transistor can be used in various power switching circuit f.

CS14N25A8R Features

* Fast Switching

* Low ON Resistance(Rdson≤0.25Ω)

* Low Gate Charge (Typical Data:22.7nC)

* Low Reverse transfer capacitances(Typical:13pF)

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 250 V 14 A 100 W 0.20 Ω

CS14N25A8R-CRMicro.pdf