CS14N10A3 Datasheet - Huajing Microelectronics

CS14N10A3 Silicon N-Channel Power MOSFET

CS14N10 A3, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. T.

CS14N10A3 Features

* l Fast Switching l Low ON Resistance(Rdson≤150 mΩ) l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 100 V 14 A 43.1 W 113 mΩ Absolute（TC= 25℃ unless otherwise specified） Symbol Parameter V

CS14N10A3-HuajingMicroelectronics.pdf