CS14N25FA9R - Silicon N-Channel Power MOSFET
VDSS 250 CS14N25F A9R, the silicon N-channel Enhanced ID 14 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 35 which reduce the conduction loss, improve switching RDS(ON)Typ 0.20 performance and enhance the avalanche energy.
The transistor can be used in various
CS14N25FA9R Features
* l Fast Switching l Low ON Resistance(Rdson≤0.25Ω) l Low Gate Charge (Typical Data:22.7nC) l Low Reverse transfer capacitances(Typical:13pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Para
