CS20N90ANR Datasheet (CR Micro) - Silicon N-Channel Power MOSFET

CS20N90ANR, Silicon N-Channel Power MOSFET

VDSS 900 CS20N90 ANR, the silicon N-channel Enhanced ID 20 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 250 which reduce the conduction loss, improve switching RDS(ON)Typ 0.28 performance and enhance the avalanche energy.

The transistor can be used in various

CS20N90ANR Features

* l Fast Switching l Low ON Resistance(Rdson≤0.40Ω) l Low Gate Charge (Typical Data: 140.5nC) l Low Reverse transfer capacitances(Typical: 18.3pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of electron ballast and adaptor. Absolute（Tc= 25℃ unless otherwise specified）