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CS35N04A3-G Datasheet - CR Micro

CS35N04A3-G Silicon N-Channel Power MOSFET

CS35N04 A3-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. The package form is TO-2.

CS35N04A3-G Features

* Fast Switching

* Low ON Resistance(Rdson≤14 mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test

* Halogen Free Applications： Power switch circuit of adaptor and charger. VDSS ID PD RDS(ON)Typ 40 V 35 A 34.6 W 10.5 mΩ Absol

CS35N04A3-G Datasheet (765.23 KB)

CS35N04A3-G Datasheet Preview — Preview of CS35N04A3-G PDF

Datasheet Details

Part number:

CS35N04A3-G

Manufacturer:

CR Micro

File Size:

765.23 KB

Description:

Silicon n-channel power mosfet.

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Stock and price

Microchip Technology Inc

MADA3KP17AE3

0 In Stock

Qty : 500 units

Unit Price : $67.93

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CS35N04A3-G Silicon N-Channel Power MOSFET CR Micro

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