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CS35N10FA9

Silicon N-Channel Power MOSFET

CS35N10FA9 Features

* Fast Switching

* Low ON Resistance(Rdson≤15 mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 100 V 35 A 36.7 W 12 mΩ Absolute（Tj= 25℃ unless otherwise specifie

CS35N10FA9 General Description

CS35N10F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. .

CS35N10FA9 Datasheet (1.13 MB)

Preview of CS35N10FA9 PDF

Datasheet Details

Part number:

CS35N10FA9

Manufacturer:

CR Micro

File Size:

1.13 MB

Description:

Silicon n-channel power mosfet.

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CS35N10FA9 Silicon N-Channel Power MOSFET CR Micro

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