Datasheet4U Logo Datasheet4U.com

CS35N10FA9 Datasheet - CR Micro

CS35N10FA9 Silicon N-Channel Power MOSFET

CS35N10F A9, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching VDSS ID PD RDS(ON)Typ performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM applications. .

CS35N10FA9 Features

* Fast Switching

* Low ON Resistance(Rdson≤15 mΩ)

* Low Gate Charge

* Low Reverse transfer capacitances

* 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. 100 V 35 A 36.7 W 12 mΩ Absolute（Tj= 25℃ unless otherwise specifie

CS35N10FA9-CRMicro.pdf

Preview of CS35N10FA9 PDF
CS35N10FA9 Datasheet Preview Page 2 CS35N10FA9 Datasheet Preview Page 3

Datasheet Details

Part number:

CS35N10FA9

Manufacturer:

CR Micro

File Size:

1.13 MB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

CS35N04A3-G Silicon N-Channel Power MOSFET (CR Micro)

CS35N04A4-G Silicon N-Channel Power MOSFET (Huajing Microelectronics)

CS35-08io4 Phase Control Thyristors (IXYS)

CS35-12io4 Phase Control Thyristors (IXYS)

CS35-14io4 Phase Control Thyristors (IXYS)

CS3511 Stereo 10 W High-efficiency Class-D Audio Power Amplifier (Cirrus Logic)

CS3524A Voltage Mode PWM Control Circuit with 200mA Output Drivers (Cherry Semiconductor Corporation)

CS3524A Voltage Mode PWM Control Circuit (ON Semiconductor)

TAGS

CS35N10FA9 CS35N10FA9 Silicon N-Channel Power MOSFET CR Micro

CS35N10FA9 Distributor