HGP028N03A Datasheet PDF (Silicon N-Channel Power MOSFET)

HGP028N03A - Silicon N-Channel Power MOSFET

Description

HGP028N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

This device is suitable for use as A load switch and PWM applications.

Features

Fast Switching.
Low ON Resistance.
Low Gate Charge.
Low Reverse transfer capacitances.
100% Single Pulse avalanche energy Test.
Halogen Free.

Datasheet Details

Part number	HGP028N03A
Manufacturer	CR Micro
File Size	660.50 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HGP028N03A Datasheet
Additional preview pages of the HGP028N03A datasheet.

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Full PDF Text Transcription

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Silicon N-Channel Power MOSFET HGP028N03A General Description： HGP028N03A, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high density Trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as A load switch and PWM applications. the package form is TO-220AB, which accords with the RoHS standard. Features： ● Fast Switching ● Low ON Resistance ● Low Gate Charge ● Low Reverse transfer capacitances ● 100% Single Pulse avalanche energy Test ● Halogen Free Applications： Power switch circuit of adaptor and charger. VDSS ID（Silicon limited） ID（Package limited） PD RDS(ON)Typ ® 30 V 160 A 60 A 104.1 W 2.

Published: Dec 8, 2024 |