CPMF-1200-S080B Silicon Carbide MOSFET

CREE

Description

www.DataSheet.co.kr CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die .

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Datasheet Specifications

Part number: CPMF-1200-S080B
Manufacturer: CREE
File Size: 1.05 MB
Datasheet: CPMF-1200-S080B_CREE.pdf
Description: Silicon Carbide MOSFET

Features

* MOSFET Package VDS RDS(on) Qg = 1200 V = 80 mΩ = 90.8 nC
* Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G D D Benefits
* Higher System

Applications

* Solar Inverters Motor Drives Military and Aerospace Maximum Ratings Symbol Parameter Continuous Drain Current Value 46 25.9 85 2.2 1.5 20 -5/+25 275 -55 to +135 260 Unit A Test Conditions VGS@20V, TC = 25˚C VGS@20V, TC = 100˚C Note 1 ID IDpulse EAS EAR IAR

CPMF-1200-S080B Distributors

📁 Related Datasheet

CPM-2F CPM-2H CPM2-1200-0025A CPM2-1200-0025B CPM2-1200-0040A CPM2-1200-0040B

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CPMF-1200-S080B Silicon Carbide MOSFET CREE

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