CPMF-1200-S080B - Silicon Carbide MOSFET

CREE

CPMF-1200-S080B Description

www.DataSheet.co.kr CPMF-1200-S080B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die .

CPMF-1200-S080B Features

* MOSFET Package VDS RDS(on) Qg = 1200 V = 80 mΩ = 90.8 nC
* Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive G G D D Benefits
* Higher System

CPMF-1200-S080B Applications

* Solar Inverters Motor Drives Military and Aerospace Maximum Ratings Symbol Parameter Continuous Drain Current Value 46 25.9 85 2.2 1.5 20 -5/+25 275 -55 to +135 260 Unit A Test Conditions VGS@20V, TC = 25˚C VGS@20V, TC = 100˚C Note 1 ID IDpulse EAS EAR IAR

📥 Download Datasheet

CPMF-1200-S080B Datasheet Preview — Preview of CPMF-1200-S080B PDF

Datasheet Details

Part number: CPMF-1200-S080B
Manufacturer: CREE
File Size: 1.05 MB
Datasheet: CPMF-1200-S080B_CREE.pdf
Description: Silicon Carbide MOSFET

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Silicon Carbide MOSFET CREE

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