CPMF-1200-S160B - Silicon Carbide MOSFET

CREE

CPMF-1200-S160B Description

www.DataSheet.co.kr CPMF-1200-S160B Z-FeTTM Silicon Carbide N-Channel Enhancement Mode Bare Die .

CPMF-1200-S160B Features

* MOSFET Package VDS RDS(on) Qg = 1200 V = 160 mΩ = 47 nC
* Industry Leading RDS(on) High Speed Switching Low Capacitances Easy to Parallel Simple to Drive D D Gate Source Source Benefits G G

CPMF-1200-S160B Applications

* Solar Inverters Motor Drives Military and Aerospace Maximum Ratings Symbol Parameter Continuous Drain Current Value 26.1 14.7 56 1.1 400 10 -5/+25 177.4 -55 to +135 260 Unit A Test Conditions VGS@20V, TC = 25˚C VGS@20V, TC = 100˚C Note 1 ID IDpulse EAS EAR

📥 Download Datasheet

CPMF-1200-S160B Datasheet Preview — Preview of CPMF-1200-S160B PDF

Datasheet Details

Part number: CPMF-1200-S160B
Manufacturer: CREE
File Size: 800.70 KB
Datasheet: CPMF-1200-S160B_CREE.pdf
Description: Silicon Carbide MOSFET

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📌 All Tags

Silicon Carbide MOSFET CREE

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