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CS4N65A8RZ-G Silicon N-Channel Power MOSFET

CS4N65A8RZ-G Description

Silicon N-Channel Power MOSFET ○R CS4N65 A8RZ-G General .
CS4N65 A8RZ-G the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improv.

CS4N65A8RZ-G Features

* Fast Switching
* Low ON Resistance(Rdson≤2.8Ω)
* Low Gate Charge (Typical Data: 14.5nC)
* Low Reverse transfer capacitances(Typical:3.5pF)
* 100% Single Pulse avalanche energy Test

CS4N65A8RZ-G Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse

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