CEM6426 Datasheet, Transistor, Chino-Excel Technology

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Part number:

CEM6426

Manufacturer:

Chino-Excel Technology

File Size:

364.50kb

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📄 Datasheet

Description:

N-channel enhancement mode field effect transistor.

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📁 Related Datasheet

CEM6428 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6428 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 4.1A, RDS(ON) = 68mΩ @VGS = 10V. RDS(ON) = 86mΩ @VGS = 4.5V. Super high.

CEM6405 - P-Channel Enhancement Mode Field Effect Transistor (CET)
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CEM6056L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 14.5A, RDS(ON) = 7.8 mΩ @VGS = 10V. RDS(ON) = 10 mΩ @VGS = 4.5V. Super high.

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CEM6080 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. -6.

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CEM6086L - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6086L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 12A, RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V. S.

CEM6088 - Dual N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
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CEM6088L Dual N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 9.0A, RDS(ON) = 14.5mΩ @VGS = 10V. RDS(ON) = 18.0mΩ @VGS.

CEM6186 - N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEM6186 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 8A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Sup.