CEM6428
Chino-Excel Technology
363.33kb
Dual n-channel enhancement mode field effect transistor.
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CEM6426 - N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM6426
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4.7A, RDS(ON) = 66mΩ @VGS = 10V. RDS(ON) = 85mΩ @VGS = 4.5V.
Super high dens.
CEM6405 - P-Channel Enhancement Mode Field Effect Transistor
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CEM6405
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-60V, -5.7A, RDS(ON) = 48mΩ @VGS = -10V. RDS(ON) = 68mΩ @VGS = -4.5.
CEM6056 - N-Channel Enhancement Mode Field Effect Transistor
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CEM6056
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 15A, RDS(ON) = 7.5 mΩ @VGS = 10V. Super high dense cell design for extremely.
CEM6056L - N-Channel Enhancement Mode Field Effect Transistor
(CET)
CEM6056L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 14.5A, RDS(ON) = 7.8 mΩ @VGS = 10V. RDS(ON) = 10 mΩ @VGS = 4.5V.
Super high.
CEM6080 - Dual Enhancement Mode Field Effect Transistor
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CEM6080
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
60V, 5.6A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 75mΩ @VGS = 4.5V. -6.
CEM6086 - N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM6086
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 12A, RDS(ON) = 11.5mΩ @VGS = 10V. Super high dense cell design.
CEM6086L - N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM6086L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 12A, RDS(ON) = 12mΩ @VGS = 10V. RDS(ON) = 15mΩ @VGS = 4.5V.
S.
CEM6088 - Dual N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM6088
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 9.5A, RDS(ON) = 12.5mΩ @VGS = 10V. Super high dense cell .
CEM6088L - Dual N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM6088L
Dual N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 9.0A, RDS(ON) = 14.5mΩ @VGS = 10V. RDS(ON) = 18.0mΩ @VGS.
CEM6186 - N-Channel Enhancement Mode Field Effect Transistor
(Chino-Excel Technology)
CEM6186
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 8A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V.
Sup.