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PE7170G - P-Channel Enhancement Mode Power MOSFET

PE7170G Description

P-Channel Enhancement Mode Power MOSFET .
The PE7170G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

PE7170G Features

* VDS = -18V, ID = -70A RDS(ON) < 3.5mΩ @ VGS=-4.5V RDS(ON) < 5mΩ @ VGS=-2.5V Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

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Datasheet Details

Part number
PE7170G
Manufacturer
ChipSourceTek
File Size
1.00 MB
Datasheet
PE7170G-ChipSourceTek.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET ChipSourceTek
ChipSourceTek PE7170G-like datasheet