CY7C147 - 4K x 1 STATIC RAM
(WE) inputs are both LOW.
Data on the input pin (DI) is written into the memory location specified on the address pins (A 0 through A 11).
Readingthedeviceisaccomplished bytakĆ ingthechipenable(CE)LOWwhile(WE) remains HIGH.
Under these conditions, the contents of the location specified on the addre
CY7C147 Features
* D D D D D D D Automatic powerĆdown when deseĆ lected CMOS for optimum speed/power High speed Capable of withstanding greater than 2001V electrostatic discharge Ċ 25 ns Low active power Ċ 440 mW (commercial) Ċ 605 mW (military) Low standby power Ċ 55 mW TTLĆcompatible inputs and outputs The CY
