CY7C147 Datasheet, Ram, Cypress Semiconductor

CY7C147 Features

• Ram D D D D D D D Automatic powerĆdown when deseĆ lected CMOS for optimum speed/power High speed Capable of withstanding greater than 2001V electrostatic discharge Ċ 25 ns Low active p

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CY7C147

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Cypress Semiconductor

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📄 Datasheet

Description:

4k x 1 static ram. (WE) inputs are both LOW. Data on the input pin (DI) is written into the memory location specified on the address pins (A 0 through

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CY7C147

Cypress Semiconductor

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