CY7C1481V33 - (CY7C1481V33 / CY7C1483V33 / CY7C1487V33) 2M x 36/4M x 18/1M x 72 Flow-Through SRAM

Cypress Semiconductor

The CY7C1481V33 by Cypress Semiconductor is a (CY7C1481V33 / CY7C1483V33 / CY7C1487V33) 2M x 36/4M x 18/1M x 72 Flow-Through SRAM. Below is the official datasheet preview.

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CY7C1481V33 (CY7C1481V33 / CY7C1483V33 / CY7C1487V33) 2M x 36/4M x 18/1M x 72 Flow-Through SRAM by Cypress Semiconductor - Datasheet Preview — Official preview page of the **CY7C1481V33** (CY7C1481V33 / CY7C1483V33 / CY7C1487V33) 2M x 36/4M x 18/1M x 72 Flow-Through SRAM datasheet (Cypress Semiconductor).

Datasheet Details

Part number	CY7C1481V33
Manufacturer	Cypress Semiconductor
File Size	612.36 KB
Description	(CY7C1481V33 / CY7C1483V33 / CY7C1487V33) 2M x 36/4M x 18/1M x 72 Flow-Through SRAM
Datasheet	CY7C1481V33_CypressSemiconductor.pdf
Additional preview pages of the CY7C1481V33 datasheet.

CY7C1481V33 Product details

Description

The Cypress Synchronous Burst SRAM family employs high-speed, low power CMOS designs using advanced single-layer polysilicon, triple-layer metal technology. A 3901 North First Street San Jose, CA 95134 408-943-2600 Revised January 18, 2003 PRELIMIN

Features

Supports 133-MHz bus operations.
2M x 36/4M x 18/1M x 72 common I/O.
Fast clock-to-output times.
5.5 ns (for 150-MHz device).
6.5 ns (for 133-MHz device).
7.5 ns (for 117-MHz device).
8.5 ns (for 100-MHz device).
Single 3.3V.
5% and +5% power supply VDD.
Separate VDDQ for 3.3V or 2.5V.
Byte Write Enable and Global Write control.
Burst Capability.
linear or interleaved burst order.

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Other Datasheets by Cypress Semiconductor

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CY7C148 - (CY7C148 / CY7C149) 1K x 4 Static RAM
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Published: Sep 28, 2005 |