CY7C1176KV18, CY7C1161KV18 - 18-Mbit QDR II SRAM Four-Word Burst Architecture

Cypress Semiconductor

Datasheet Details

Part number	CY7C1176KV18, CY7C1161KV18
Manufacturer	Cypress Semiconductor
File Size	908.73 KB
Description	18-Mbit QDR II SRAM Four-Word Burst Architecture
Datasheet	CY7C1161KV18_CypressSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: CY7C1176KV18, CY7C1161KV18. Please refer to the document for exact specifications by model.

The CY7C1161KV18, CY7C1176KV18, CY7C1163KV18, and CY7C1165KV18 are 1.8 V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture.

Configurations With Read Cycle Latency of 2.5 cycles: CY7C1161KV18.
2 M x 8 CY7C1176KV18.
2 M x 9 CY7C1163KV18.
1 M x 18 CY7C1165KV18.
512 K x 36 Separate independent read and write data ports.
Supports concurrent transactions 550-MHz clock for high bandwidth Four-word burst for reducing address bus frequency Double data rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz Available in 2.5 clock cycle latenc.

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Published: Apr 15, 2011 |