* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V ID @ TC=25°C, VGS=10V RDS(ON)@VGS=10V, ID=10A RDS(ON)@VGS=4.5V, ID=8A 100V 10A 12.2A 12.6
MTB015N10QQ8 Datasheet (456.98 KB)
MTB015N10QQ8
Cystech Electonics
456.98 KB
N-channel enhancement mode mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB015N10QQ8
Spec. No. : C141Q8 Issued Date : 2015.10.13 Revised Date : Page No. : .
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