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MTB028N10QNCQ8 N-Channel Enhancement Mode Power MOSFET

MTB028N10QNCQ8 Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTB028N10QNCQ8 Spec.No.: C168Q8 Issued Date : 2016.11.18 Revised Date : 2016.11.2.

MTB028N10QNCQ8 Features

* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=4.5V, ID=3A 100V 6.6A 19.3 mΩ(typ) 27.0mΩ(typ) Symbol

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Datasheet Details

Part number
MTB028N10QNCQ8
Manufacturer
Cystech Electonics
File Size
428.93 KB
Datasheet
MTB028N10QNCQ8-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
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