* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=4.5V, ID=3A 100V 6.6A 19.3 mΩ(typ) 27.0mΩ(typ) Symbol
MTB028N10QNCQ8 Datasheet (428.93 KB)
MTB028N10QNCQ8
Cystech Electonics
428.93 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB028N10QNCQ8
Spec. No. : C168Q8 Issued Date : 2016.11.18 Revised Date : 2016.11.2.
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