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MTB028N10RNCQ8 N-Channel Enhancement Mode Power MOSFET

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Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTB028N10RNCQ8 Spec.No.: C053Q8 Issued Date : 2016.11.22 Revised Date : Page No..

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Datasheet Specifications

Part number
MTB028N10RNCQ8
Manufacturer
Cystech Electonics
File Size
428.87 KB
Datasheet
MTB028N10RNCQ8-CystechElectonics.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=4.5V, ID=3A 100V 6.6A 22 mΩ(typ) 26 mΩ(typ) Symbol MT

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