* Single Drive Requirement
* Low On-resistance
* Fast Switching Characteristic
* Repetitive Avalanche Rated
* Pb-free & Halogen-free package BVDSS ID @ TA=25°C, VGS=10V RDS(ON)@VGS=10V, ID=4A RDS(ON)@VGS=4.5V, ID=3A 100V 6.6A 22 mΩ(typ) 26 mΩ(typ) Symbol MT
MTB028N10RNCQ8 Datasheet (428.87 KB)
MTB028N10RNCQ8
Cystech Electonics
428.87 KB
N-channel enhancement mode power mosfet.
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB028N10RNCQ8
Spec. No. : C053Q8 Issued Date : 2016.11.22 Revised Date : Page No. .
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