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MTB080P06N3 P-Channel Enhancement Mode Power MOSFET

MTB080P06N3 Description

CYStech Electronics Corp.Spec.No.: C069N3 Issued Date : 2016.03.24 Revised Date : Page No.: 1/ 9 P-Channel Enhancement Mode MOSFET MTB080P06N3 .

MTB080P06N3 Features

* Advanced trench process technology
* High density cell design for ultra low on resistance
* Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Ordering Information Device MTB080P06N3-0-T1-G Package S

MTB080P06N3 Applications

* or systems.
* CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB080P06N3 CYStek Product Specification

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Datasheet Details

Part number
MTB080P06N3
Manufacturer
Cystech Electonics
File Size
410.12 KB
Datasheet
MTB080P06N3-CystechElectonics.pdf
Description
P-Channel Enhancement Mode Power MOSFET

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P-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTB080P06N3-like datasheet