DMN2310UT N-CHANNEL MOSFET

DIODES

Description

DMN2310UT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 240mΩ @ VGS = 4.5V 300mΩ @ VGS = 2.5V ID TA = +25°C 1.2A 1.04A Desc.
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, mak.

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Datasheet Specifications

Part number: DMN2310UT
Manufacturer: DIODES ↗
File Size: 704.05 KB
Datasheet: DMN2310UT-DIODES.pdf
Description: N-CHANNEL MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface Mount Package
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* F

Applications

* This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* DC-DC Converters
* Load Switch

DMN2310UT Distributors

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DMN2310UT N-CHANNEL MOSFET DIODES

DIODES DMN2310UT-like datasheet