DMN2310UTQ N-CHANNEL MOSFET

DIODES

Description

Product Summary BVDSS 20V RDS(on) 240mΩ @ VGS = 4.5V 300mΩ @ VGS = 2.5V ID TA = +25°C 1.2A 1.04A .
and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, mak.

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Datasheet Specifications

Part number: DMN2310UTQ
Manufacturer: DIODES ↗
File Size: 600.59 KB
Datasheet: DMN2310UTQ-DIODES.pdf
Description: N-CHANNEL MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-Small Surface Mount Package
* ESD Protected Gate
* Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
* Halogen- and Antimony-Free. “Green” Device (Note 3)

Applications

* This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
* DC-DC Converters
* Load Switch
* Power Management Functions SOT523 DMN2310UTQ N-CHANNEL

DMN2310UTQ Distributors

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DMN2310UTQ N-CHANNEL MOSFET DIODES

DIODES DMN2310UTQ-like datasheet