DMN2320UFB4 N-Channel MOSFET

Diodes

Description

Product Summary V(BR)DSS 20V RDS(on) 320mΩ @ VGS= 4.5V 500mΩ @ VGS= 2.5V 1000mΩ @ VGS= 1.8V ID max TA = +25°C 1.0A 0.65A 0.4A .
and Applications This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it idea.

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Datasheet Specifications

Part number: DMN2320UFB4
Manufacturer: DIODES ↗
File Size: 184.75 KB
Datasheet: DMN2320UFB4-Diodes.pdf
Description: N-Channel MOSFET

Features

* Footprint of just 0.6mm2
* thirteen times smaller than SOT23
* 0.4mm profile

Applications

* This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

DMN2320UFB4 Distributors

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DMN2320UFB4 N-Channel MOSFET Diodes

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